Journal Title:Ieee Transactions On Device And Materials Reliability
The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
本出版物的范围包括但不限于以下方面的可靠性:设备、材料、工艺、接口、集成微系统(包括 MEMS 和传感器)、晶体管、技术(CMOS、BiCMOS 等)、集成电路( IC、SSI、MSI、LSI、ULSI、ELSI 等),薄膜晶体管应用。从概念阶段到研发再到制造放大的每个阶段对这些实体的可靠性进行测量和理解,为设备、材料、工艺、封装和其他必需品的可靠性提供了整体数据库。将产品成功推向市场。该可靠性数据库是满足客户期望的优质产品的基础。如此开发的产品具有高可靠性。将实现高质量,因为将发现产品弱点(根本原因分析)并根据最终产品进行设计。这种不断提高可靠性和质量的过程将产生卓越的产品。最后,可靠性和质量不是一回事。但从某种意义上说,可以或必须做的一切都是为了保证产品在客户条件下在现场成功运行。我们的目标是抓住这些进步。另一个目标是在电子材料和设备的可靠性领域集中交叉交流,并提供对影响可靠性的基本现象的基本理解。此外,该出版物是可靠性跨学科研究的论坛。总体目标是提供最前沿/最先进的信息,这与创建可靠的产品至关重要。
Ieee Transactions On Device And Materials Reliability创刊于2001年,由IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC出版商出版,收稿方向涵盖工程技术 - 工程:电子与电气全领域,此刊是中等级别的SCI期刊,所以过审相对来讲不是特别难,但是该刊专业认可度不错,仍然是一本值得选择的SCI期刊 。平均审稿速度较慢,6-12周,影响因子指数1.407,该期刊近期没有被列入国际期刊预警名单,广大学者值得一试。
大类学科 | 分区 | 小类学科 | 分区 | Top期刊 | 综述期刊 |
工程技术 | 3区 | PHYSICS, APPLIED 物理:应用 ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 | 3区 4区 | 是 | 是 |
名词解释:
中科院分区也叫中科院JCR分区,基础版分为13个大类学科,然后按照各类期刊影响因子分别将每个类别分为四个区,影响因子5%为1区,6%-20%为2区,21%-50%为3区,其余为4区。
WOS分区等级 | JCR所属学科 | 分区 |
Q3 | ENGINEERING, ELECTRICAL & ELECTRONIC PHYSICS, APPLIED | Q3 Q3 |
名词解释:
WOS即Web of Science,是全球获取学术信息的重要数据库,Web of Science包括自然科学、社会科学、艺术与人文领域的信息,来自全世界近9,000种最负盛名的高影响力研究期刊及12,000多种学术会议多学科内容。给期刊分区时会按照某一个学科领域划分,根据这一学科所有按照影响因子数值降序排名,然后平均分成4等份,期刊影响因子值高的就会在高分区中,最后的划分结果分别是Q1,Q2,Q3,Q4,Q1代表质量最高。
CiteScore | SJR | SNIP | CiteScore排名 | ||||||||||||||||
4.30 | 0.401 | 1.077 |
|
名词解释:
CiteScore:衡量期刊所发表文献的平均受引用次数。
SJR:SCImago 期刊等级衡量经过加权后的期刊受引用次数。引用次数的加权值由施引期刊的学科领域和声望 (SJR) 决定。
SNIP:每篇文章中来源出版物的标准化影响将实际受引用情况对照期刊所属学科领域中预期的受引用情况进行衡量。
是否OA开放访问: | h-index: | 年文章数: |
未开放 | 63 | 92 |
Gold OA文章占比: | 2021-2022最新影响因子(数据来源于搜索引擎): | 开源占比(OA被引用占比): |
5.70% | 2 | 0.01... |
研究类文章占比:文章 ÷(文章 + 综述) | 期刊收录: | 中科院《国际期刊预警名单(试行)》名单: |
98.21% | SCIE、SCI | 否 |
历年IF值(影响因子):
历年引文指标和发文量:
历年中科院JCR大类分区数据:
历年自引数据:
2019-2021国家/地区发文量统计:
国家/地区 | 数量 |
USA | 52 |
CHINA MAINLAND | 51 |
India | 50 |
Taiwan | 35 |
France | 20 |
Italy | 18 |
Belgium | 15 |
Austria | 14 |
Japan | 13 |
GERMANY (FED REP GER) | 12 |
近年引用统计:
期刊名称 | 数量 |
IEEE T ELECTRON DEV | 167 |
IEEE T NUCL SCI | 116 |
MICROELECTRON RELIAB | 100 |
IEEE T DEVICE MAT RE | 93 |
IEEE ELECTR DEVICE L | 69 |
APPL PHYS LETT | 59 |
J APPL PHYS | 44 |
IEEE T COMP PACK MAN | 24 |
IEEE J SOLID-ST CIRC | 23 |
IEEE T POWER ELECTR | 23 |
近年被引用统计:
期刊名称 | 数量 |
IEEE T ELECTRON DEV | 127 |
IEEE T DEVICE MAT RE | 93 |
MICROELECTRON RELIAB | 88 |
IEEE ACCESS | 47 |
IEEE T NUCL SCI | 37 |
IEEE ELECTR DEVICE L | 36 |
IEICE ELECTRON EXPR | 35 |
IEEE T POWER ELECTR | 31 |
J MATER SCI-MATER EL | 31 |
ELECTRONICS-SWITZ | 30 |
近年文章引用统计:
文章名称 | 数量 |
A First-Principles Study of the ... | 23 |
Understanding BTI in SiC MOSFETs... | 9 |
Comparative Thermal and Structur... | 9 |
Output-Power Enhancement for Hot... | 8 |
Rapid Solder Interconnect Fatigu... | 7 |
Study of Long Term Drift of Alum... | 7 |
Impacts of Process and Temperatu... | 6 |
Comparative Study of Reliability... | 6 |
A Compact and Self-Isolated Dual... | 6 |
A Review on Hot-Carrier-Induced ... | 6 |
同类学科的其他优质期刊 | 影响因子 | 中科院分区 |
Spe Journal | 3.372 | 3区 |
Structure And Infrastructure Engineering | 2.620 | 3区 |
Ieee Transactions On Dielectrics And Electrical Insulation | 2.554 | 3区 |
Polish Journal Of Chemical Technology | 1.193 | 4区 |
Mechanika | 0.458 | 4区 |
Reliability Engineering & System Safety | 5.040 | 1区 |
Informacije Midem-journal Of Microelectronics Electronic Components And Material | 0.340 | 4区 |
Annals Of Nuclear Energy | 1.378 | 3区 |
Marine Technology Society Journal | 0.619 | 4区 |
Bulletin Of The Polish Academy Of Sciences-technical Sciences | 1.385 | 4区 |
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